ds30268 rev. 4 - 2 1 of 4 MMBT2222AT www.diodes.com diodes incorporated MMBT2222AT npn small signal surface mount transistor epitaxial planar die construction complementary pnp type available (mmbt2907at) ultra-small surface mount package also available in lead free version characteristic symbol MMBT2222AT unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous i c 600 ma power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient (note 1) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g top view c e b n mechanical data case: sot-523, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram marking (see page 2): 1p ordering & date code information, see page 2 weight: 0.002 grams (approx.) sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 all dimensions in mm notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. e b c
ds30268 rev. 4 - 2 2 of 4 MMBT2222AT www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo 75 v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 10ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cex 10 na v ce = 60v, v eb(off) = 3.0v base cutoff current i bl 20 na v ce = 60v, v eb(off) = 3.0v on characteristics (note 2) dc current gain h fe 35 50 75 100 40 i c = 100 a, v ce = 10v i c = 1.0ma, v ce = 10v i c = 10ma, v ce = 10v i c = 150ma, v ce = 10v i c = 500ma, v ce = 10v collector-emitter saturation voltage v ce(sat) 0.3 1.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.6 1.2 2.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8pf v cb = 10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?30pf v eb = 0.5v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 300 mhz v ce = 20v, i c = 20ma, f = 100mhz input impedance h ie 0.25 1.25 k v ce = 10 vdc, i c = 10 madc, f = 1.0khz voltage feedback ratio h re 4.0 x 10 -4 v ce = 10 vdc, i c = 10 madc, f = 1.0khz small-signal current gain h fe 75 375 v ce = 10 vdc, i c = 10 madc, f = 1.0khz output admittance h oe 25 200 s v ce = 10 vdc, i c = 10 madc, f = 1.0khz noise figure nf 4.0 db v ce = 10 vdc, i c = 100 adc, r s = 1.0 k ohms, f = 1.0khz switching characteristics delay time t d 10 ns v cc = 30v, i c = 150ma, v be(off) = - 0.5v, i b1 = 15ma rise time t r 25 ns storage time t s 225 ns v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma fall time t f 60 ns notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: MMBT2222AT-7-f. device packaging shipping MMBT2222AT-7 sot-523 3000/tape & reel (note 3) ordering information month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key 1p = product type marking code ym = date code marking y = year (ex: n = 2002) m = month (ex: 9 = september) 1pym marking information year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30268 rev. 4 - 2 3 of 4 MMBT2222AT www.diodes.com 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 2 typical dc current gain vs collector current t = -25c a t = +25c a t = 125c a v = 1.0v ce 0 100 150 50 200 2 5 0 0100200 p , power dissipation (mw) d t , ambient temperature (c) a fi g . 1, power deratin g curve (see note 1) 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 i , base current (ma) b fi g .4 t y pical collector saturation re g ion v , collector-emitter voltage (v) ce i= 1ma c i= 10ma c i= 30ma c i = 100ma c i = 300ma c 1.0 5.0 20 10 30 0.1 10 1.0 50 capacitance (pf) reverse volts (v) fi g .3 t y pical capacitance cobo cibo 1 10 100 1000 v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 5 collector emitter saturation voltage vs. collector current t = 25c a t = -50c a t = 150c a 0 0.1 0.2 0.3 0.4 0 .5 i c i b =10 1 0.1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fi g . 6 base emitter volta g e vs. collector current 0.2 0.3 0.4 0.6 0.5 0.8 0.7 1 . 0 0.9 v= 5v ce t= 25c a t= -50c a t = 150c a
ds30268 rev. 4 - 2 4 of 4 MMBT2222AT www.diodes.com 1 10 100 1000 1 10 100 i , collector current (ma) c fi g . 7 gain bandwidth p roduct vs. collector current f , gain bandwidth product (mhz) t v= 5v ce
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